Samsung electronics co., ltd. (20240128287). IMAGE SENSOR simplified abstract

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IMAGE SENSOR

Organization Name

samsung electronics co., ltd.

Inventor(s)

Sanghyuck Moon of Suwon-si (KR)

Jueun Park of Suwon-si (KR)

Hyuncheol Kim of Suwon-si (KR)

Jungbin Yun of Suwon-si (KR)

Seungjoon Lee of Suwon-si (KR)

Taesub Jung of Suwon-si (KR)

IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128287 titled 'IMAGE SENSOR

Simplified Explanation

The image sensor described in the patent application includes a substrate, at least one transfer gate, a floating diffusion region, an intrinsic semiconductor region, and a photoelectric conversion region. The intrinsic semiconductor region is an undoped region located between the transfer gate and the floating diffusion region.

  • The image sensor includes a substrate where the components are located.
  • At least one transfer gate is positioned on the top surface of the substrate.
  • A floating diffusion region is located in the substrate, apart from the transfer gate in a parallel direction to the top surface.
  • An intrinsic semiconductor region is situated in the substrate between the transfer gate and the floating diffusion region.
  • A photoelectric conversion region is located in the substrate, apart from the floating diffusion region in a perpendicular direction to the first direction.

Potential Applications

The technology described in the patent application could be used in digital cameras, smartphones, security cameras, and other devices that require image sensors.

Problems Solved

This technology helps in improving the performance and efficiency of image sensors by optimizing the placement and characteristics of the different regions within the sensor.

Benefits

The benefits of this technology include enhanced image quality, improved sensitivity, reduced noise, and overall better performance of the image sensor.

Potential Commercial Applications

  • "Innovative Image Sensor Technology for Enhanced Performance"

Possible Prior Art

There may be prior art related to image sensors with similar components and configurations, but specific examples are not provided in the patent application.

Unanswered Questions

How does this technology compare to existing image sensor designs in terms of performance and cost-effectiveness?

The patent application does not provide a direct comparison with existing image sensor designs, so it is unclear how this technology stacks up against current solutions.

Are there any limitations or drawbacks to implementing this technology in practical devices?

The patent application does not mention any potential limitations or drawbacks of using this image sensor technology, leaving room for further exploration and analysis in real-world applications.


Original Abstract Submitted

an image sensor including a substrate, at least one transfer gate on a top surface of the substrate, a floating diffusion region located in the substrate and disposed apart from the at least one transfer gate in a first direction, the first direction being parallel to the top surface of the substrate, an intrinsic semiconductor region located in the substrate and disposed between the at least one transfer gate and the floating diffusion region in the first direction, and a photoelectric conversion region located in the substrate and disposed apart from the floating diffusion region in a second direction, wherein the second direction is perpendicular to the first direction, and wherein the intrinsic semiconductor region is an undoped region.