18499088. SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND RECESSED MULTI-STEP FIELD PLATE AND METHOD OF FABRICATION THEREFOR (NXP USA, Inc.)

SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND RECESSED MULTI-STEP FIELD PLATE AND METHOD OF FABRICATION THEREFOR

Organization Name

NXP USA, Inc.

Inventor(s)

Bernhard Grote of Phoenix AZ US

Bruce McRae Green of Gilbert AZ US

SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND RECESSED MULTI-STEP FIELD PLATE AND METHOD OF FABRICATION THEREFOR

This abstract first appeared for US patent application 18499088 titled 'SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND RECESSED MULTI-STEP FIELD PLATE AND METHOD OF FABRICATION THEREFOR

Original Abstract Submitted

A semiconductor device includes a semiconductor substrate, surface passivation over the semiconductor substrate, and a first interlayer dielectric over the surface passivation. A gate electrode includes a gate channel portion that extends through the surface passivation to contact the upper surface of the semiconductor substrate, a first gate field plate with a first horizontal bottom extent that overlies and contacts the upper surface of the surface passivation, and a second gate field plate with a second horizontal bottom extent that is higher than the first horizontal bottom extent. A conductive field plate includes a first field plate with a third horizontal bottom extent that is recessed below the upper surface of the surface passivation, and a second field plate with a fourth horizontal bottom extent that is higher than the first horizontal bottom extent of the first gate field plate.