18499083. SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND MULTI-STEP FIELD PLATE AND METHOD OF FABRICATION THEREFOR (NXP USA, Inc.)
SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND MULTI-STEP FIELD PLATE AND METHOD OF FABRICATION THEREFOR
Organization Name
Inventor(s)
Bernhard Grote of Phoenix AZ US
Bruce McRae Green of Gilbert AZ US
SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND MULTI-STEP FIELD PLATE AND METHOD OF FABRICATION THEREFOR
This abstract first appeared for US patent application 18499083 titled 'SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND MULTI-STEP FIELD PLATE AND METHOD OF FABRICATION THEREFOR
Original Abstract Submitted
A semiconductor device includes a semiconductor substrate, surface passivation over the semiconductor substrate, and a first interlayer dielectric over the surface passivation. A gate electrode includes a gate channel portion that extends through the surface passivation to contact the upper surface of the semiconductor substrate, a first gate field plate with a first horizontal bottom extent that overlies the upper surface of the surface passivation, and a second gate field plate with a second horizontal bottom extent that is higher than the first horizontal bottom extent. A conductive field plate includes a first field plate with a third horizontal bottom extent that overlies and contacts the upper surface of the surface passivation, and a second field plate with a fourth horizontal bottom extent that is at least as high as the first horizontal bottom extent of the first gate field plate.
