18926085. REFLECTIVE PHOTOMASK BLANK AND METHOD FOR MANUFACTURING REFLECTIVE PHOTOMASK (Shin-Etsu Chemical Co., Ltd.)
REFLECTIVE PHOTOMASK BLANK AND METHOD FOR MANUFACTURING REFLECTIVE PHOTOMASK
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REFLECTIVE PHOTOMASK BLANK AND METHOD FOR MANUFACTURING REFLECTIVE PHOTOMASK
This abstract first appeared for US patent application 18926085 titled 'REFLECTIVE PHOTOMASK BLANK AND METHOD FOR MANUFACTURING REFLECTIVE PHOTOMASK
Original Abstract Submitted
A reflective photomask blank has: a substrate ; a reflective multilayer film that is formed on one main surface of the substrate and reflects the exposure light; a protective film formed in contact with the reflective multilayer film ; and an absorbing film that is formed on the protective film and absorbs the exposure light. The protective film is formed using a film containing ruthenium (Ru). The absorbing film is formed using a single-layer film containing tantalum (Ta) and nitrogen (N), and has a content of nitrogen of 30 atom % or more and less than 60 atom %. Contrast between light reflected from a surface of the protective film and light reflected on a surface of the absorbing film with respect to light having a wavelength of 193 nm to 248 nm is 20% or more.
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