18523894. EMBEDDED FLASH MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME (UNITED MICROELECTRONICS CORP.)

EMBEDDED FLASH MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Organization Name

UNITED MICROELECTRONICS CORP.

Inventor(s)

Pei-Lun Jheng of Tainan City TW

Po-Jui Chiang of Changhua County TW

Chao-Sheng Cheng of Taichung City TW

Ming-Jen Chang of Hsinchu City TW

Ko-Chin Chang of Hsinchu City TW

Yu-Ming Liu of Miaoli County TW

EMBEDDED FLASH MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME

This abstract first appeared for US patent application 18523894 titled 'EMBEDDED FLASH MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Original Abstract Submitted

An embedded flash memory structure, including a semiconductor substrate, an erase gate on the semiconductor substrate, two floating gates respectively at two sides of the erase gate on the semiconductor substrate, two word lines respectively at outer sides of the two floating gates, and two metal control gates respectively on the two floating gates, wherein a sacrificial layer is at at least one side of the metal control gate, and the sacrificial layer is between the metal control gate and the erase gate or between the metal control gate and the word line.