18917674. MOSFET TRANSISTOR WITH AN IMPROVED BODY STRUCTURE TO INCREASE THE ROBUSTNESS AND RELATED MANUFACTURING PROCESS (STMicroelectronics International N.V.)

MOSFET TRANSISTOR WITH AN IMPROVED BODY STRUCTURE TO INCREASE THE ROBUSTNESS AND RELATED MANUFACTURING PROCESS

Organization Name

STMicroelectronics International N.V.

Inventor(s)

Luigi Arcuri of Misterbianco IT

Antonio Giuseppe Grimaldi of S. Giovanni La Punta IT

MOSFET TRANSISTOR WITH AN IMPROVED BODY STRUCTURE TO INCREASE THE ROBUSTNESS AND RELATED MANUFACTURING PROCESS

This abstract first appeared for US patent application 18917674 titled 'MOSFET TRANSISTOR WITH AN IMPROVED BODY STRUCTURE TO INCREASE THE ROBUSTNESS AND RELATED MANUFACTURING PROCESS

Original Abstract Submitted

A MOSFET transistor with a semiconductor body including a drain region of a first conductivity type, delimited by a front surface, and at least one cell including: a pair of gate structures laterally offset parallel to a first axis and each including a respective gate dielectric region, arranged on the front surface, and a respective gate conductive region, arranged on the corresponding gate dielectric region; a body structure of a second conductivity type, which includes a body region, which extends inside the drain region starting from the front surface and contacts portions of the gate dielectric regions, and a strengthening region, which extends below the body region; and a pair of source regions of the first conductivity type, which extend inside the body region starting from the front surface. The body structure includes an enriched region, which extends inside the body region, below the source regions, and protrudes laterally, parallel to the first axis, in both directions with respect to the pair of source regions.