18385067. IN SITU PLASMA TREATMENT BEFORE AL2O3 DEPOSITION FOR IMPROVED RON (STMicroelectronics International N.V.)

IN SITU PLASMA TREATMENT BEFORE AL2O3 DEPOSITION FOR IMPROVED RON

Organization Name

STMicroelectronics International N.V.

Inventor(s)

Ferdinando Iucolano of Gravina di Catania IT

Cristina Tringali of Augusta IT

Maria Eloisa Castagna of Catania IT

Giovanni Giorgino of Caltagirone IT

Aurore Constant of Tours FR

Virgil Guillon of Tours FR

IN SITU PLASMA TREATMENT BEFORE AL2O3 DEPOSITION FOR IMPROVED RON

This abstract first appeared for US patent application 18385067 titled 'IN SITU PLASMA TREATMENT BEFORE AL2O3 DEPOSITION FOR IMPROVED RON

Original Abstract Submitted

Methods, systems, and apparatuses for normally off HEMT are provided, including for in situ plasma treatment before Al2O3 deposition for improved on on-hydrogen-based resistance. An exemplary method may include providing a wafer comprising a AlGaN layer and a p-GaN layer; etching the p-GaN layer to form a p-GaN gate; depositing a first aluminum oxide layer over the p-GaN gate; depositing a silicon dioxide layer over the aluminum layer; etching the silicon dioxide layer and the aluminum oxide layer to expose a first portion of the AlGaN layer starting a first distance from the p-GaN gate; treating the first portion of the AlGaN layer with an in-situ hydrogen-based plasma treatment, wherein the in situ plasma treatment deactivates magnesium in the first portion of the AlGaN layer; and forming at least a first normally-off HEMT, wherein the gate of the normally-off HEMT is the first p-GaN gate.