18910885. METHOD FOR MANUFACTURING A VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE AND CORRESPONDING VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE (Robert Bosch GmbH)

METHOD FOR MANUFACTURING A VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE AND CORRESPONDING VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE

Organization Name

Robert Bosch GmbH

Inventor(s)

Daniel Krebs of Aufhausen DE

METHOD FOR MANUFACTURING A VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE AND CORRESPONDING VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE

This abstract first appeared for US patent application 18910885 titled 'METHOD FOR MANUFACTURING A VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE AND CORRESPONDING VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE

Original Abstract Submitted

A method for manufacturing a vertical field effect transistor structure and a vertical field effect transistor structure. The vertical field effect transistor structure has a semiconductor body having first and second connection zones of a first conductor type, a channel zone of the first conductor type, or of a second conductor type complementary to the first conductor type, arranged between the first and second connection zone, a plurality of trenches extending into the semiconductor body, the trenches reaching from the second connection zone through the channel zone into the first connection zone and forming fins of the channel zone and of the second connection zone, a control electrode arranged in the trenches, the electrode being arranged adjacent to the channel zone and insulated from the semiconductor body, and a breakdown current path connected between the first and second connection zones and in parallel with the channel zone.