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Taiwan semiconductor manufacturing company, ltd. (20250138084). GALLIUM NITRIDE-BASED DEVICES AND METHODS OF TESTING THEREOF

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GALLIUM NITRIDE-BASED DEVICES AND METHODS OF TESTING THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yi-An Lai of Taipei City TW

Chan-Hong Chern of Palo Alto CA US

Cheng-Hsiang Hsieh of Taipei City TW

GALLIUM NITRIDE-BASED DEVICES AND METHODS OF TESTING THEREOF

This abstract first appeared for US patent application 20250138084 titled 'GALLIUM NITRIDE-BASED DEVICES AND METHODS OF TESTING THEREOF

Original Abstract Submitted

an integrated circuit includes a first circuit, formed based on one or more group iii-v compound materials, that is configured to operate with a first voltage range. the integrated circuit includes a second circuit, also formed based on the one or more group iii-v compound materials, that is operatively coupled to the first circuit and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range. the integrated circuit includes a set of first test terminals connected to the first circuit. the integrated circuit includes a set of second test terminals connected to the second circuit. test signals applied to the set of first test terminals and to the set of second test terminals, respectively, are independent from each other.

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