Micron technology, inc. (20250132267). MEMORY DEVICE INCLUDING SUPPORT STRUCTURES
MEMORY DEVICE INCLUDING SUPPORT STRUCTURES
Organization Name
Inventor(s)
Andrew Zhe Wei Ong of Singapore SG
Soo Ting Helen Yee of Singapore SG
MEMORY DEVICE INCLUDING SUPPORT STRUCTURES
This abstract first appeared for US patent application 20250132267 titled 'MEMORY DEVICE INCLUDING SUPPORT STRUCTURES
Original Abstract Submitted
some embodiments include apparatuses and methods of forming the apparatuses. one of the apparatuses includes tiers of respective memory cells and control gates, the tier located one over another over a substrate, the control gates including a control gate closest to the substrate, the control gates including respective portions forming a staircase structure; conductive contacts contacting the control gates at a location of the staircase structure, the conductive contacts including a conductive contact contacting the control gate; a dielectric structure located on sidewalls of the control gates; and support structures adjacent the conductive contacts and having lengths extending vertically from the substrate, the support structures including a support structure closest to the conductive contact, the support structure located at a distance from an edge of the dielectric structure, wherein a ratio of a width of the support structure over the distance is ranging from 1.6 to 2.0.