18646983. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE (SK hynix Inc.)

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

Organization Name

SK hynix Inc.

Inventor(s)

Eun Seok Choi of Icheon-si Gyeonggi-do KR

Jae Young Oh of Icheon-si Gyeonggi-do KR

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

This abstract first appeared for US patent application 18646983 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

Original Abstract Submitted

Provided herein is a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a channel layer, and a source select line surrounding at least a part of the channel layer. A p-type impurity is locally doped in the part of the channel layer or a gate insulating layer includes a first member interposed between the channel layer and the source select line and aligned with a data storage layer.