18581398. SEMICONDUCTOR DEVICE AND MEMORY DEVICE INCLUDING COMPLEMENTARY DELAY CIRCUITS (SK hynix Inc.)
SEMICONDUCTOR DEVICE AND MEMORY DEVICE INCLUDING COMPLEMENTARY DELAY CIRCUITS
Organization Name
Inventor(s)
Chae Hyoun Park of Gyeonggi-do KR
SEMICONDUCTOR DEVICE AND MEMORY DEVICE INCLUDING COMPLEMENTARY DELAY CIRCUITS
This abstract first appeared for US patent application 18581398 titled 'SEMICONDUCTOR DEVICE AND MEMORY DEVICE INCLUDING COMPLEMENTARY DELAY CIRCUITS
Original Abstract Submitted
A semiconductor device includes a first delay circuit having a first delay amount that decreases according to a common bias, and configured to generate a first delay control signal based on the first delay amount; a second delay circuit having a second delay amount that increases according to the common bias, and configured to generate a second delay control signal based on the second delay amount; a signal generation circuit configured to generate a plurality of internal control signals in response to at least one of the first delay control signal and the second delay control signal; and an internal operation circuit configured to complementarily perform a first operation and a second operation within a target time in response to the internal control signals.
