18433830. SOURCE/DRAIN DIELECTRIC STRUCTURE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)

SOURCE/DRAIN DIELECTRIC STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Cheng-Yu Wei of Taoyuan City TW

Cheng-I Lin of Hsinchu TW

Shu-Han Chen of Hsinchu City TW

Chi On Chui of Hsinchu City TW

SOURCE/DRAIN DIELECTRIC STRUCTURE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 18433830 titled 'SOURCE/DRAIN DIELECTRIC STRUCTURE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

The present disclosure describes a semiconductor device having a source/drain dielectric. The semiconductor device includes a channel structure on a substrate, a dielectric structure on the substrate and adjacent to the channel structure, and an epitaxial structure on a top surface of the dielectric structure. The epitaxial structure is in contact with the channel structure.