18377413. SEMICONDUCTOR DEVICE WITH THICKENING LAYER AND METHOD FOR FABRICATING THE SAME (NANYA TECHNOLOGY CORPORATION)

SEMICONDUCTOR DEVICE WITH THICKENING LAYER AND METHOD FOR FABRICATING THE SAME

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

CHUN-HENG Wu of TAOYUAN CITY TW

SEMICONDUCTOR DEVICE WITH THICKENING LAYER AND METHOD FOR FABRICATING THE SAME

This abstract first appeared for US patent application 18377413 titled 'SEMICONDUCTOR DEVICE WITH THICKENING LAYER AND METHOD FOR FABRICATING THE SAME

Original Abstract Submitted

The present application discloses a semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate; a word line structure including a word line dielectric layer in the substrate and including a U-shaped profile, a word line conductive layer on the word line dielectric layer and within the substrate, and a word line capping layer on the word line conductive layer; a top thickening layer including a U-shaped profile, between the word line conductive layer and the word line capping layer, and between the word line dielectric layer and the word line capping layer; a bottom capping layer on the substrate and adjacent to the word line dielectric layer; and a top capping layer covering the bottom capping layer and the word line structure. Top surfaces of the top thickening layer and the word line dielectric layer are coplanar and higher than the substrate.