18904750. 2D Material Stack Formation (IMEC VZW)
2D Material Stack Formation
Organization Name
Inventor(s)
Pierre Morin of Woluwe-Saint-Pierre BE
Vladislav Voronenkov of Leuven BE
2D Material Stack Formation
This abstract first appeared for US patent application 18904750 titled '2D Material Stack Formation
Original Abstract Submitted
A method for forming a stack including: a) providing: a flat surface, a first set of walls, comprising a first wall and a second wall, and meeting at a corner to form an angle, and a first layer formed of a two-dimensional material in physical contact with the flat surface and with both the first and second walls at the corner, wherein the angle aligns with the crystal structure of the two-dimensional material with a tolerance of up to 5°, wherein a top surface of the first layer is exposed, wherein each of the walls has a length of from 5 nm to 1000 nm, wherein a height of the walls, thereby forming a cavity delimited at least by the top surface and the first set of walls, then b) forming a second layer in the cavity and in physical contact with the exposed top surface of the first layer.
