18484372. SELECTIVE PASSIVATION OF PHOTORESISTS (Tokyo Electron Limited)
SELECTIVE PASSIVATION OF PHOTORESISTS
Organization Name
Inventor(s)
Michael Carcasi of Austin TX US
SELECTIVE PASSIVATION OF PHOTORESISTS
This abstract first appeared for US patent application 18484372 titled 'SELECTIVE PASSIVATION OF PHOTORESISTS
Original Abstract Submitted
A method of processing a substrate includes forming a photoresist layer over the substrate, exposing the substrate to a pattern of an actinic radiation, where the exposing causes a photo-reaction in an exposed portion of the photoresist layer. The method includes treating the photoresist layer with a binding agent, where the binding agent is selectively adsorbed on a first portion of the photoresist layer, and performing a development process to remove a second portion of the photoresist, the first portion remaining after the development process.
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