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18892187. SEMICONDUCTOR DEVICE (ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE)

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SEMICONDUCTOR DEVICE

Organization Name

ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor(s)

Sooji Nam of Daejeon KR

Sung Haeng Cho of Daejeon KR

Jeho Na of Daejeon KR

Chihun Sung of Daejeon KR

Kyunghee Choi of Daejeon KR

Jung Hoon Han of Daejeon KR

SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 18892187 titled 'SEMICONDUCTOR DEVICE

Original Abstract Submitted

Provided is a semiconductor device including a substrate, a first transistor on the substrate, an interlayer insulating layer covering the first transistor, a second transistor on the interlayer insulating layer, and a storage node contact passing through the interlayer insulating layer, and connecting any one of source/drain electrodes of the first transistor and a gate electrode of the second transistor, wherein a first channel pattern of the first transistor may include an n-type oxide transistor, and a second channel pattern of the second transistor may include an p-type oxide transistor.

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