18421144. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Kuo-Cheng Chiang of Hsinchu TW
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
This abstract first appeared for US patent application 18421144 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Original Abstract Submitted
A semiconductor device structure and methods of forming the same are described. The structure includes a gate dielectric layer disposed over a substrate, a gate electrode layer disposed over the gate dielectric layer, and a first gate spacer disposed adjacent the gate dielectric layer, wherein the first gate spacer comprises an inner surface facing the gate dielectric layer and an outer surface opposite the inner surface, and the first gate spacer includes an oxygen concentration that decreases from the inner surface towards the outer surface of the first gate spacer.
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Fu Lu of Hsinchu TW
- Lung-Kun Chu of New Taipei TW
- Jia-Ni Yu of New Taipei TW
- Chung-Wei Hsu of Hsinchu TW
- Shih-Hao Lai of Hsinchu TW
- Kuo-Cheng Chiang of Hsinchu TW
- Chih-Hao Wang of Hsinchu TW
- H01L29/423
- H01L21/8234
- H01L27/088
- H01L29/06
- H01L29/66
- H01L29/775
- H01L29/786
- CPC H10D30/6735
