18482190. STACKED MULTI-GATE DEVICE WITH FRONT-AND-BACK INTERCONNECTION AND METHODS FOR FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)

STACKED MULTI-GATE DEVICE WITH FRONT-AND-BACK INTERCONNECTION AND METHODS FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Wei-Xiang You of Kaohsiung City TW

Jui-Chien Huang of Hsinchu TW

Chun-Yen Lin of Hsinchu TW

Szuya Liao of Zhubei TW

STACKED MULTI-GATE DEVICE WITH FRONT-AND-BACK INTERCONNECTION AND METHODS FOR FORMING THE SAME

This abstract first appeared for US patent application 18482190 titled 'STACKED MULTI-GATE DEVICE WITH FRONT-AND-BACK INTERCONNECTION AND METHODS FOR FORMING THE SAME

Original Abstract Submitted

A method includes forming a first complementary Field-Effect Transistor (CFET) and a second CFET. The first CFET includes a first lower transistor, and a first upper transistor overlapping the first lower transistor. The second CFET includes a second lower transistor, and a second upper transistor overlapping the second lower transistor. The method further includes performing a first etching process to form a first opening, wherein the first etching process includes etching a first gate stack between the first upper transistor and the second upper transistor, and etching a second gate stack between the first lower transistor and the second lower transistor. The first opening is filled with a dielectric material to form a dielectric region. The method further includes performing a second etching process to etch a middle portion of the dielectric region and to form a second opening, and filling the second opening with a conductive material to form a through-via.