Taiwan semiconductor manufacturing co., ltd. (20250118657). STACKED MULTI-GATE DEVICE WITH FRONT-AND-BACK INTERCONNECTION AND METHODS FOR FORMING THE SAME

STACKED MULTI-GATE DEVICE WITH FRONT-AND-BACK INTERCONNECTION AND METHODS FOR FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Wei-Xiang You of Kaohsiung City TW

Jui-Chien Huang of Hsinchu TW

Chun-Yen Lin of Hsinchu TW

Szuya Liao of Zhubei TW

STACKED MULTI-GATE DEVICE WITH FRONT-AND-BACK INTERCONNECTION AND METHODS FOR FORMING THE SAME

This abstract first appeared for US patent application 20250118657 titled 'STACKED MULTI-GATE DEVICE WITH FRONT-AND-BACK INTERCONNECTION AND METHODS FOR FORMING THE SAME

Original Abstract Submitted

a method includes forming a first complementary field-effect transistor (cfet) and a second cfet. the first cfet includes a first lower transistor, and a first upper transistor overlapping the first lower transistor. the second cfet includes a second lower transistor, and a second upper transistor overlapping the second lower transistor. the method further includes performing a first etching process to form a first opening, wherein the first etching process includes etching a first gate stack between the first upper transistor and the second upper transistor, and etching a second gate stack between the first lower transistor and the second lower transistor. the first opening is filled with a dielectric material to form a dielectric region. the method further includes performing a second etching process to etch a middle portion of the dielectric region and to form a second opening, and filling the second opening with a conductive material to form a through-via.