Samsung electronics co., ltd. (20250120127). INTEGRATED CIRCUIT DEVICE INCLUDING A PFET WITH A SILICON GERMANIUM CLADDED CHANNEL AND METHODS OF FORMING THE SAME
INTEGRATED CIRCUIT DEVICE INCLUDING A PFET WITH A SILICON GERMANIUM CLADDED CHANNEL AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
Seungchan Yun of Waterford NY US
INTEGRATED CIRCUIT DEVICE INCLUDING A PFET WITH A SILICON GERMANIUM CLADDED CHANNEL AND METHODS OF FORMING THE SAME
This abstract first appeared for US patent application 20250120127 titled 'INTEGRATED CIRCUIT DEVICE INCLUDING A PFET WITH A SILICON GERMANIUM CLADDED CHANNEL AND METHODS OF FORMING THE SAME
Original Abstract Submitted
an integrated circuit device includes a p-type field effect transistor that includes a strained channel, the strained channel comprising a silicon channel and silicon germanium cladding layers on opposing surfaces thereof, the silicon germanium cladding layers abutting the silicon channel without being grown therefrom.
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