Samsung electronics co., ltd. (20240103735). MEMORY DEVICE simplified abstract
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Seungjun Shin of Suwon-si (KR)
Yeongwoo Kang of Suwon-si (KR)
DongHyeok Cho of Suwon-si (KR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240103735 titled 'MEMORY DEVICE
Simplified Explanation
The memory device described in the patent application includes various components such as memory cells, sense amplifier circuits, local sense amplifier circuits, local drivers, and a global sense amplifier and write driver. The innovation lies in the ability of the local driver to selectively disconnect the pre-global input/output line from the global input/output line based on the operation for the memory cell.
- First memory cell electrically connected with a first word line and a first bit line
- First bit line sense amplifier circuit connected with the first bit line
- First local sense amplifier circuit connected with the first bit line sense amplifier circuit through a first local input/output line
- First local driver connected with the first local sense amplifier circuit through a first pre-global input/output line
- Sense amplifier and write driver connected with the first local driver through a global input/output line
- First local driver selectively electrical-disconnects the first pre-global input/output line from the global input/output line based on the operation for the first memory cell
Potential Applications
The technology described in this patent application could be applied in:
- Solid-state drives
- Embedded systems
- High-performance computing
Problems Solved
This technology helps in:
- Improving memory access speed
- Enhancing data transfer efficiency
- Reducing power consumption
Benefits
The benefits of this technology include:
- Faster data processing
- Lower energy consumption
- Increased overall system performance
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Data centers
- Automotive industry
Possible Prior Art
One possible prior art related to this technology is the use of local sense amplifiers in memory devices to improve read and write operations. However, the specific implementation of a local driver selectively disconnecting input/output lines based on memory cell operation may be a novel aspect of this patent application.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
This article does not provide a direct comparison between this technology and existing memory devices in terms of speed and efficiency. Further research or testing may be needed to determine the exact performance benefits of this innovation.
What are the potential challenges in implementing this technology on a large scale?
The article does not address the potential challenges in implementing this technology on a large scale, such as manufacturing costs or compatibility with existing systems. Additional studies or analyses may be required to assess the scalability of this innovation.
Original Abstract Submitted
disclosed is a memory device which includes a first memory cell that is electrically connected with a first word line and a first bit line, a first bit line sense amplifier circuit that is electrically connected with the first bit line, a first local sense amplifier circuit that is electrically connected with the first bit line sense amplifier circuit through a first local input/output line, a first local driver that is electrically connected with the first local sense amplifier circuit through a first pre-global input/output line, and a sense amplifier and write driver that is electrically connected with the first local driver through a global input/output line, and the first local driver selectively electrical-disconnects the first pre-global input/output line from the global input/output line, based on an operation for the first memory cell.
