Apple inc. (20240105617). Vertical Transistors With Backside Power Delivery simplified abstract

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Vertical Transistors With Backside Power Delivery

Organization Name

apple inc.

Inventor(s)

Xin Miao of Saratoga CA (US)

Praveen Raghavan of Los Gatos CA (US)

Thomas Hoffmann of Los Gatos CA (US)

Vertical Transistors With Backside Power Delivery - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105617 titled 'Vertical Transistors With Backside Power Delivery

Simplified Explanation

The patent application describes structures that combine topside metal routing and backside metal routing with vertical transistors, including a building block cell with a metal contact layer between the backside metal routing and the vertical transistors. Various connections within the building block cell can create more complex structures such as inverter devices, NAND devices, and multiplexer devices.

  • Building block cell with metal contact layer
  • Combination of topside metal routing, backside metal routing, and vertical transistors
  • Formation of complex structures like inverters, NAND devices, and multiplexers

Potential Applications

The technology described in the patent application could be applied in the following areas:

  • Integrated circuits
  • Semiconductor devices
  • Electronic systems

Problems Solved

The technology addresses the following issues:

  • Efficient routing of metal in semiconductor devices
  • Integration of vertical transistors with metal routing
  • Creation of complex structures within a building block cell

Benefits

The technology offers the following benefits:

  • Improved performance of semiconductor devices
  • Enhanced functionality of integrated circuits
  • Increased design flexibility for electronic systems

Potential Commercial Applications

The technology could find commercial applications in:

  • Semiconductor manufacturing companies
  • Electronics industry
  • Research and development organizations

Possible Prior Art

One possible prior art for this technology could be the integration of metal routing with vertical transistors in semiconductor devices.

Unanswered Questions

How does this technology compare to existing methods of integrating metal routing with vertical transistors?

The article does not provide a direct comparison with existing methods, leaving the reader to wonder about the specific advantages or differences of this new approach.

What are the specific design considerations for implementing this technology in different types of semiconductor devices?

The article does not delve into the specific design considerations for implementing this technology in various semiconductor devices, leaving a gap in understanding the practical application of the innovation.


Original Abstract Submitted

various structures that implement topside metal routing and backside metal routing in combination with vertical transistors are disclosed. the various structures include a building block cell with a metal contact layer between the backside metal routing and the vertical transistors. various connections can be made within the building block cell to form more complex structures such as, but not limited to, inverter devices, nand devices, and mux (multiplexer) devices.