18890900. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (Japan Display Inc.)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 18890900 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
A semiconductor device includes a first gate electrode, an oxide semiconductor layer including a first oxide semiconductor having a polycrystalline structure over the first gate electrode, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, and a second gate electrode overlapping the first gate electrode and the oxide semiconductor layer over the source electrode and the drain electrode. The second gate electrode includes a second oxide semiconductor having a polycrystalline structure. The second gate electrode is electrically connected to the first gate electrode.