18291389. OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE (BOE TECHNOLOGY GROUP CO., LTD.)

OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE

Organization Name

BOE TECHNOLOGY GROUP CO., LTD.

Inventor(s)

Lizhong Wang of Beijing CN

Guangcai Yuan of Beijing CN

Ce Ning of Beijing CN

Hehe Hu of Beijing CN

Nianqi Yao of Beijing CN

Dapeng Xue of Beijing CN

Shuilang Dong of Beijing CN

Liping Lei of Beijing CN

Dongfang Wang of Beijing CN

Zhengliang Li of Beijing CN

OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE

This abstract first appeared for US patent application 18291389 titled 'OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE

Original Abstract Submitted

An oxide thin film transistor, a preparation method thereof, and an electronic device are provided. The oxide thin film transistor includes a base substrate, a gate electrode and a metal oxide semiconductor layer, a gate insulation layer arranged between the metal oxide semiconductor layer and the gate electrode; the gate insulation layer includes a silicon oxide insulation layer and a silicon nitride layer, the silicon nitride layer adopts a single-layer structure or include a plurality of silicon nitride sublayers which are sequentially stacked, the silicon oxide insulation layer is between the silicon nitride layer and the metal oxide semiconductor layer; at least a part of a region in the silicon nitride layer satisfies that the percentage content of Si—H bonds in the sum of Si—N bonds, N—H bonds and Si—H bonds is not more than 7.