18893820. HIGH DENSITY CAPACITOR AND MANUFACTURING METHOD THEREFOR (ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE)
HIGH DENSITY CAPACITOR AND MANUFACTURING METHOD THEREFOR
Organization Name
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
Inventor(s)
HIGH DENSITY CAPACITOR AND MANUFACTURING METHOD THEREFOR
This abstract first appeared for US patent application 18893820 titled 'HIGH DENSITY CAPACITOR AND MANUFACTURING METHOD THEREFOR
Original Abstract Submitted
A high-density capacitor and a method for manufacturing the same are disclosed. The high-density capacitor includes a metal-oxide-semiconductor (MOS) capacitor having a silicon layer with a dopant concentration of at least 1×1020 cm-3; a first dielectric layer formed on above the silicon layer, and a first metal layer formed above the first dielectric layer.