18372982. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STACKED ARCHITECTURES (Intel Corporation)

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STACKED ARCHITECTURES

Organization Name

Intel Corporation

Inventor(s)

Nicole K. Thomas of Portland OR US

Marko Radosavljevic of Portland OR US

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STACKED ARCHITECTURES

This abstract first appeared for US patent application 18372982 titled 'GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STACKED ARCHITECTURES

Original Abstract Submitted

Gate-all-around integrated circuit structures having stacked architectures, and methods of fabricating gate-all-around integrated circuit structures having stacked architectures, are described. For example, an integrated circuit structure includes a first transistor having a first plurality of nanowires of a first composition. A second transistor having a second plurality of nanowires is vertically over and spaced apart from the first plurality of nanowires, the second plurality of nanowires of a second composition different than the first composition. An oxide layer is completely vertically separating the first transistor from the second transistor or an oxide layer only partially vertically separating the first transistor from the second transistor.