18972346. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE (Intel Corporation)
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE
Organization Name
Inventor(s)
Biswajeet Guha of Hillsboro OR US
Mauro Kobrinsky of Portland OR US
Patrick Morrow of Portland OR US
Oleg Golonzka of Beaverton OR US
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE
This abstract first appeared for US patent application 18972346 titled 'GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE
Original Abstract Submitted
Gate-all-around integrated circuit structures having a removed substrate, and methods of fabricating gate-all-around integrated circuit structures having a removed substrate, are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack surrounds a channel region of the vertical arrangement of horizontal nanowires. A pair of non-discrete epitaxial source or drain structures is at first and second ends of the vertical arrangement of horizontal nanowires. A pair of dielectric spacers is between the pair of non-discrete epitaxial source or drain structures and the gate stack. The pair of dielectric spacers and the gate stack have co-planar top surfaces. The pair of dielectric spacers, the gate stack and the pair of non-discrete epitaxial source or drain structures have co-planar bottom surfaces.
- Intel Corporation
- Biswajeet Guha of Hillsboro OR US
- Mauro Kobrinsky of Portland OR US
- Patrick Morrow of Portland OR US
- Oleg Golonzka of Beaverton OR US
- Tahir Ghani of Portland OR US
- H01L29/06
- H01L21/02
- H01L21/027
- H01L21/306
- H01L21/84
- H01L27/12
- H01L29/08
- H01L29/10
- H01L29/417
- H01L29/423
- H01L29/66
- H01L29/78
- CPC H10D62/121
