20240088032.Structure and Method of Fabrication for High Performance Integrated Passive Device simplified abstract (apple inc.)
Contents
- 1 Structure and Method of Fabrication for High Performance Integrated Passive Device
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Structure and Method of Fabrication for High Performance Integrated Passive Device - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Structure and Method of Fabrication for High Performance Integrated Passive Device
Organization Name
Inventor(s)
Vidhya Ramachandran of Cupertino CA (US)
Chi Nung Ni of Foster City CA (US)
Chueh-An Hsieh of Hsinchu County (TW)
Rekha Govindaraj of San Jose CA (US)
Long Huang of San Jose CA (US)
Rohan U. Mandrekar of Sunnyvale CA (US)
Saumya K. Gandhi of San Francisco CA (US)
Yizhang Yang of Sunnyvale CA (US)
Saurabh P. Sinha of Austin TX (US)
Antonietta Oliva of Sausalito CA (US)
Structure and Method of Fabrication for High Performance Integrated Passive Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240088032 titled 'Structure and Method of Fabrication for High Performance Integrated Passive Device
Simplified Explanation
The abstract describes a microelectronic module that includes a module substrate, a chip mounted onto the module substrate, and a semiconductor-based integrated passive device between the chip and the module substrate. The integrated passive device may have an upper RDL stack-up with thicker wiring layers than a lower BEOL stack-up, and may be solder bonded or hybrid bonded with the chip.
- The microelectronic module includes a module substrate, a chip, and a semiconductor-based integrated passive device.
- The integrated passive device has an upper RDL stack-up with thicker wiring layers than a lower BEOL stack-up.
- The integrated passive device may be solder bonded or hybrid bonded with the chip.
Potential Applications
The technology described in the patent application could be applied in:
- Advanced electronics manufacturing
- Semiconductor industry
- Microelectronic packaging
Problems Solved
This technology helps in:
- Improving performance of microelectronic modules
- Enhancing reliability of integrated passive devices
- Streamlining chip bonding processes
Benefits
The benefits of this technology include:
- Increased efficiency in microelectronic module assembly
- Enhanced signal integrity in electronic devices
- Cost-effective manufacturing processes
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art in this field is the use of traditional passive components in microelectronic modules.
Unanswered Questions
How does this technology compare to existing passive devices in terms of performance and reliability?
The article does not provide a direct comparison between this technology and existing passive devices. Further research or testing may be needed to determine the advantages of this innovation.
What are the specific manufacturing challenges that this technology addresses in the semiconductor industry?
The article does not delve into the specific manufacturing challenges that this technology addresses. Understanding these challenges could provide insights into the impact of this innovation on the industry.
Original Abstract Submitted
microelectronic modules are described. in an embodiment, a microelectronic module includes a module substrate, a chip mounted onto the module substrate, and a semiconductor-based integrated passive device between the chip and the module substrate. the semiconductor-based integrated passive device may include an upper rdl stack-up with thicker wiring layers than a lower beol stack-up. the semiconductor-based integrated passive device may be further solder bonded or hybrid bonded with the chip.
- Apple inc.
- Vidhya Ramachandran of Cupertino CA (US)
- Chi Nung Ni of Foster City CA (US)
- Chueh-An Hsieh of Hsinchu County (TW)
- Rekha Govindaraj of San Jose CA (US)
- Jun Zhai of Cupertino CA (US)
- Long Huang of San Jose CA (US)
- Rohan U. Mandrekar of Sunnyvale CA (US)
- Saumya K. Gandhi of San Francisco CA (US)
- Zhuo Yan of San Jose CA (US)
- Yizhang Yang of Sunnyvale CA (US)
- Saurabh P. Sinha of Austin TX (US)
- Antonietta Oliva of Sausalito CA (US)
- H01L23/528
- H01L23/00
- H01L23/48
- H01L23/522
- H01L49/02