18468349. NON-VOLATILE MEMORY WITH EFFICIENT PRECHARGE IN SUB-BLOCK MODE (Western Digital Technologies, Inc.)
NON-VOLATILE MEMORY WITH EFFICIENT PRECHARGE IN SUB-BLOCK MODE
Organization Name
Western Digital Technologies, Inc.
Inventor(s)
Dengtao Zhao of Los Gatos CA US
Xiang Yang of Santa Clara CA US
NON-VOLATILE MEMORY WITH EFFICIENT PRECHARGE IN SUB-BLOCK MODE
This abstract first appeared for US patent application 18468349 titled 'NON-VOLATILE MEMORY WITH EFFICIENT PRECHARGE IN SUB-BLOCK MODE
Original Abstract Submitted
A block of non-volatile memory cells is divided into a first sub-block and a second sub-block. Programming non-volatile memory cells of the second sub-block after programming non-volatile memory cells of the first sub-block comprises boosting unselected channels in the second sub-block to a boosted condition; prior to boosting unselected channels in the second sub-block to the boosted condition, boosting unselected channels in the first sub-block to the boosted condition to pre-charge the channels of the second sub-block; and applying a program voltage to a selected word line of the second sub-block while channels in the first sub-block are in the boosted condition and channels in the first sub-block are in the boosted condition.
