DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

BYOUNGHAK Hong of Albany NY (US)

SEUNGHYUN Song of Albany NY (US)

KI-IL Kim of Clifton Park NY (US)

GUNHO Jo of Clifton Park NY (US)

KANG-ILL Seo of Springfield VA (US)

DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18499258 titled 'DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS

Simplified Explanation

The abstract describes a nanosheet transistor device with a transistor stack consisting of lower and upper nanosheet transistors with different widths and gate widths.

Lower nanosheet transistor with a first nanosheet width and lower gate width
Upper nanosheet transistor on top of lower nanosheet transistor with a second nanosheet width and upper gate width different from the lower nanosheet transistor

- Potential Applications:**

Advanced electronic devices
High-performance computing
Nanotechnology research

- Problems Solved:**

Improving transistor performance
Enhancing device efficiency
Miniaturizing electronic components

- Benefits:**

Increased speed and efficiency
Enhanced functionality
Potential for smaller and more powerful electronic devices

Original Abstract Submitted

Nanosheet transistor devices are provided. A nanosheet transistor device includes a transistor stack that includes a lower nanosheet transistor having a first nanosheet width and a lower gate width. The transistor stack also includes an upper nanosheet transistor that is on the lower nanosheet transistor and that has a second nanosheet width and an upper gate width that are different from the first nanosheet width and the lower gate width, respectively. Related methods of forming a nanosheet transistor device are also provided.