METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Eun Hyea Ko of Suwon-si (KR)

Hoon Han of Suwon-si (KR)

Byung Keun Hwang of Suwon-si (KR)

Young Hun Sung of Suwon-si (KR)

Youn Joung Cho of Suwon-si (KR)

METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18312811 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Simplified Explanation

The method of fabricating a semiconductor device involves:

Forming a first layer with a metal material and no acid.
Forming a second layer with a trench exposing the first surface, containing an acid and organic material.
Providing a first precursor with an alkoxy group and silicon.
Forming a third layer of silicon oxide on the second surface within the trench, in contact with a portion of the first surface.

Potential applications of this technology:

Semiconductor manufacturing
Electronics industry

Problems solved by this technology:

Improving semiconductor device fabrication process
Enhancing performance and reliability of semiconductor devices

Benefits of this technology:

Increased efficiency in semiconductor fabrication
Better quality control in device manufacturing
Enhanced functionality of semiconductor devices

Original Abstract Submitted

Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device comprises forming a first layer which has a first surface, does not comprise an acid, and comprises a metal material; forming, on the first layer, a second layer which comprises a trench exposing the first surface, has a second surface intersecting the first surface within the trench, and comprises an acid and an organic material; providing a first precursor comprising an alkoxy group and silicon; and forming a third layer comprising silicon oxide on the second surface within the trench. The third layer is in contact with a portion of the first surface within the trench.