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Intel corporation (20250096052). LOCALIZED THERMAL HEALING AND DOPING OF GLASS CORES FOR MICROELECTRONIC ASSEMBLIES

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LOCALIZED THERMAL HEALING AND DOPING OF GLASS CORES FOR MICROELECTRONIC ASSEMBLIES

Organization Name

intel corporation

Inventor(s)

Mohamed R. Saber of College Station TX US

Hanyu Song of Chandler AZ US

Fanyi Zhu of Gilbert AZ US

Bai Nie of Chandler AZ US

Srinivas V. Pietambaram of Chandler AZ US

Deniz Turan of Chander AZ US

Yonggang Li of Chandler AZ US

Naiya Soetan-dodd of Mesa AZ US

Shuren Qu of Gilbert AZ US

LOCALIZED THERMAL HEALING AND DOPING OF GLASS CORES FOR MICROELECTRONIC ASSEMBLIES

This abstract first appeared for US patent application 20250096052 titled 'LOCALIZED THERMAL HEALING AND DOPING OF GLASS CORES FOR MICROELECTRONIC ASSEMBLIES

Original Abstract Submitted

microelectronic assemblies with glass cores that have undergone localized thermal healing and/or localized doping in regions adjacent to glass surface are disclosed. in one example, a microelectronic assembly includes a glass core having a first face, an opposing second face, a sidewall extending between the first face and the second face, a surface region, and a bulk region, where the surface region is a portion of the glass core that starts at a surface of the first face, the second face, or the sidewall and extends from the surface into the glass core by a total depth of up to about 50 micron, the bulk region is a portion of the glass core further away from the surface than the surface region, and a density of the surface region is higher than a density of the bulk region, e.g., at least about 5% higher or at least about 7.5% higher.

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