20240055487. SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD simplified abstract (National Central University)

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SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD

Organization Name

National Central University

Inventor(s)

Tien-Hsi Lee of Tao-Yuan City (TW)

Jun-Huang Wu of Tao-Yuan City (TW)

Yu-Sheng Chiou of Tao-Yuan City (TW)

Shu-Cheng Li of Tao-Yuan City (TW)

Wei-Chi Huang of Tao-Yuan City (TW)

Yu-Tang Lin of Tao-Yuan City (TW)

SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240055487 titled 'SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD

Simplified Explanation

The substrate processing method involves:

  • Providing a substrate with a predetermined area and a predetermined reaction part extending from the surface towards the bottom surface.
  • Performing an anodization reaction on the predetermined reaction part to convert it into a weakened layer.
  • Removing the weakened layer to expose the surface of the substrate in the predetermined area.

Potential applications of this technology:

  • Surface modification of substrates for various industries such as electronics, optics, and medical devices.

Problems solved by this technology:

  • Providing a controlled method for modifying the surface properties of substrates.

Benefits of this technology:

  • Allows for precise and controlled modification of substrate surfaces.
  • Enables the creation of weakened layers for specific applications.


Original Abstract Submitted

a substrate processing method includes providing a substrate, wherein the substrate has a surface and a bottom surface opposite to each other, the substrate is defined with a predetermined area, the predetermined area is defined with a predetermined reaction part, and the predetermined reaction part extends from the surface toward the bottom surface of the substrate; performing a anodization reaction on the predetermined reaction part by an electrochemical method to convert the predetermined reaction part into a weakened layer, wherein the weakened layer has a thickness; and removing the weakened layer so that the substrate in the predetermined area has an exposed surface.