IN-TRENCH CAPACITOR MERGED STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Shu-Hui Su of Tucheng City (TW)

Hsin-Li Cheng of Hsinchu (TW)

YingKit Felix Tsui of Cupertino CA (US)

Tuo-Hsin Chien of Zhubei City (TW)

Jyun-Ying Lin of Wujie Township (TW)

Shi-Min Wu of Changhua County (TW)

Yu-Chi Chang of Kaohsiung City (TW)

Ting-Chen Hsu of Taichung City (TW)

IN-TRENCH CAPACITOR MERGED STRUCTURE

This abstract first appeared for US patent application 20250063743 titled 'IN-TRENCH CAPACITOR MERGED STRUCTURE

Original Abstract Submitted

some implementations described herein provide techniques and apparatuses for an integrated circuit device including a trench capacitor structure that has a merged region. a material filling the merged region is different than a material that is included in electrode layers of the trench capacitor structure. furthermore, the material filling the merged region includes a coefficient of thermal expansion and a modulus of elasticity that, in combination with the architecture of the trench capacitor structure, reduce thermally induced stresses and/or strains within the integrated circuit device relative to another integrated circuit device having a trench capacitor structure including a merged region and electrode layers of a same material.