18238022. SEMICONDUCTOR DEVICE WITH RESISTANCE MODIFICATION DOPED REGION (NANYA TECHNOLOGY CORPORATION)
SEMICONDUCTOR DEVICE WITH RESISTANCE MODIFICATION DOPED REGION
Organization Name
Inventor(s)
WEI-ZHONG Li of TAOYUAN CITY (TW)
SEMICONDUCTOR DEVICE WITH RESISTANCE MODIFICATION DOPED REGION
This abstract first appeared for US patent application 18238022 titled 'SEMICONDUCTOR DEVICE WITH RESISTANCE MODIFICATION DOPED REGION
Original Abstract Submitted
A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate, a well region, a fuse medium, a gate electrode, a fuse doped region, a source/drain (S/D) region, and a resistance modification doped region. The well region is within the substrate with a first conductive type. The fuse medium is disposed over the substrate. The gate electrode is disposed over the fuse medium. The fuse doped region is under the gate electrode with a second conductive type different from first conductive type. The S/D region is adjacent to the fuse doped region with the second conductive type. The resistance modification doped region has the second conductive type and partially overlaps the fuse doped region.
