18157408. MEMORY DEVICE INCLUDING SWITCHING MATERIAL AND PHASE CHANGE MATERIAL simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

MEMORY DEVICE INCLUDING SWITCHING MATERIAL AND PHASE CHANGE MATERIAL

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Minwoo Choi of Suwon-si (KR)

Young Jae Kang of Suwon-si (KR)

Bonwon Koo of Suwon-si (KR)

Yongyoung Park of Suwon-si (KR)

Hajun Sung of Suwon-si (KR)

Dongho Ahn of Suwon-si (KR)

Kiyeon Yang of Suwon-si (KR)

Wooyoung Yang of Suwon-si (KR)

Changseung Lee of Suwon-si (KR)

MEMORY DEVICE INCLUDING SWITCHING MATERIAL AND PHASE CHANGE MATERIAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18157408 titled 'MEMORY DEVICE INCLUDING SWITCHING MATERIAL AND PHASE CHANGE MATERIAL

Simplified Explanation

The patent application describes a memory device that consists of a memory cell with a selection layer and a phase change material layer, along with a controller. The selection layer contains a switching material, while the phase change material layer contains a phase change material. The controller is designed to apply a write pulse to both the selection layer and the phase change material layer, and it can control the polarity, peak value, and shape of the write pulse.

• The memory device includes a memory cell with a selection layer and a phase change material layer.
• The selection layer contains a switching material, while the phase change material layer contains a phase change material.
• The controller is responsible for applying a write pulse to both the selection layer and the phase change material layer.
• The controller can control the polarity, peak value, and shape of the write pulse.

Potential Applications of this Technology:

• This memory device could be used in various electronic devices, such as computers, smartphones, and tablets, to provide non-volatile memory storage.
• It could be utilized in data centers and servers to enhance storage capacity and performance.
• The technology could find applications in automotive systems, IoT devices, and wearable devices, where low-power and high-density memory solutions are required.

Problems Solved by this Technology:

• The memory device addresses the need for non-volatile memory storage that can retain data even when power is lost.
• It solves the problem of limited storage capacity and slower performance in traditional memory technologies.
• The technology provides a solution for reducing power consumption in memory devices.

Benefits of this Technology:

• The memory device offers high-density storage capabilities, allowing for more data to be stored in a smaller physical space.
• It provides faster read and write speeds compared to traditional memory technologies.
• The technology offers non-volatile memory storage, ensuring data retention even during power outages.
• It enables lower power consumption, leading to improved energy efficiency in electronic devices.

Original Abstract Submitted

A memory device includes a memory cell including a selection layer and a phase change material layer, and a controller, wherein the selection layer includes a switching material, the phase change material layer includes a phase change material, and the controller is configured to apply a write pulse to the selection layer and the phase change material layer and control a polarity, a peak value, and a shape of the write pulse.