18576312. MEMORY DEVICE AND MANUFACTURING METHOD THEREOF (SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION)
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
Inventor(s)
Cheol Seong Hwang of Seoul (KR)
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 18576312 titled 'MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
The present disclosure discloses a manufacturing method of a memory device including forming a structure including an epitaxial material plug extending in a vertical direction on a substrate, an epitaxial channel material layer extending in a horizontal direction from a side surface of the epitaxial material plug, and a gate insulating material layer formed on at least a surface portion of the epitaxial channel material layer.
