18231750. PHASE CHANGE RANDOM ACCESS MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

PHASE CHANGE RANDOM ACCESS MEMORY DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chun-Hsu Yen of Hsinchu City (TW)

Yu-Chuan Hsu of Hsinchu City (TW)

Chen-Hui Yang of Hsinchu City (TW)

PHASE CHANGE RANDOM ACCESS MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18231750 titled 'PHASE CHANGE RANDOM ACCESS MEMORY DEVICE

Simplified Explanation

The abstract describes a method for making a memory device. Here is a simplified explanation of the abstract:

• A first dielectric layer is formed over a bottom electrode.
• A first void is formed through the first dielectric layer, exposing a portion of the upper boundary of the bottom electrode.
• A first conductive structure is formed along the sidewalls of the first void and the exposed portion of the upper boundary of the bottom electrode.
• The first void is filled with the first dielectric layer.
• A phase change material layer is formed over the first dielectric layer, causing it to contact at least a portion of a sidewall of the first conductive structure.

Potential applications of this technology:

• Memory devices: The method described can be used to create memory devices that utilize phase change materials for data storage.

Problems solved by this technology:

• Improved memory performance: The use of phase change materials in memory devices can provide faster read and write speeds compared to traditional memory technologies.

Benefits of this technology:

• Increased data storage density: The method allows for the creation of memory devices with higher storage capacities due to the use of phase change materials.
• Enhanced memory performance: The use of phase change materials can result in faster and more reliable memory operations.
• Compatibility with existing technology: The method can be integrated into existing manufacturing processes for memory devices.

Original Abstract Submitted

A method for making a memory device, includes: forming a first dielectric layer over a bottom electrode; forming a first void extending through the first dielectric layer to expose a portion of an upper boundary of the bottom electrode; forming a first conductive structure lining along respective sidewalls of the first void and the exposed portion of the upper boundary of the bottom electrode; filling the first void with the first dielectric layer; and forming a phase change material layer over the first dielectric layer to cause the phase change material layer to contact at least a portion of a sidewall of the first conductive structure.