18486114. SEMICONDUCTOR DETECTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DETECTOR

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Ya-Chin King of Taipei City (TW)

Chrong Jung Lin of Hsinchu City (TW)

Burn Jeng Lin of Hsinchu City (TW)

Shi-Jiun Wang of Changhua City (TW)

SEMICONDUCTOR DETECTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18486114 titled 'SEMICONDUCTOR DETECTOR

Simplified Explanation

The device described in the patent application includes several components such as an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. Here is a simplified explanation of the abstract:

• The active region is surrounded by the isolation structure.
• The gate structure is positioned across the active region.
• The ILD layer surrounds the gate structure.
• The reading contact is in contact with the isolation structure and separated from the gate structure by a portion of the ILD layer.
• The sensing contact is also in contact with the isolation structure and separated from the gate structure by another portion of the ILD layer.

Potential applications of this technology:

• Integrated circuits and semiconductor devices.
• Memory devices and storage systems.
• Sensing and detection systems.
• Electronic devices requiring precise control and measurement.

Problems solved by this technology:

• Improved isolation and protection of the active region.
• Enhanced control and measurement capabilities.
• Reduction of interference and cross-talk between components.

Benefits of this technology:

• Increased performance and reliability of the device.
• Enhanced functionality and versatility.
• Improved integration and miniaturization.
• Higher precision and accuracy in measurements and control.

Original Abstract Submitted

A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.