Sk hynix inc. (20250087248). SEMICONDUCTOR DEVICE INCLUDING CHARGE RETENTION NODE
SEMICONDUCTOR DEVICE INCLUDING CHARGE RETENTION NODE
Organization Name
Inventor(s)
Woo Cheol Lee of Icheon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING CHARGE RETENTION NODE
This abstract first appeared for US patent application 20250087248 titled 'SEMICONDUCTOR DEVICE INCLUDING CHARGE RETENTION NODE
Original Abstract Submitted
a semiconductor device may include first and second transistors on a substrate. the first transistor may include first and second source/drain regions; a first channel region between the first and second source/drain regions; a first gate electrode over the first channel region; and a charge retention node between the first channel region and the first gate electrode. the second transistor may include third and fourth source/drain regions, a portion of the third source/drain region being connected to the charge retention node; a second channel region between the third and fourth source/drain regions; and a second gate electrode over the second channel region.