20240021408. METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PLASMA PROCESSING SYSTEM simplified abstract (Lam Research Corporation)
Contents
METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PLASMA PROCESSING SYSTEM
Organization Name
Inventor(s)
John C. Valcore, Jr. of Worthington OH (US)
Bradford J. Lyndaker of Lowville NY (US)
METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PLASMA PROCESSING SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240021408 titled 'METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PLASMA PROCESSING SYSTEM
Simplified Explanation
Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The patent describes a system where a base radio frequency (RF) signal pulses between a high power level and a low power level. Additionally, non-base RF generators, responsive to a control signal, proactively switch between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, the non-base RF generators can also switch between a first predefined RF frequency and a second predefined RF frequency as the base RF signal pulses. The patent also discloses techniques for determining the first and second predefined power levels and/or the first and second predefined RF frequencies for the non-base RF signals in advance of production time.
- The patent describes a method for processing a substrate in a multi-frequency plasma processing chamber.
- The base RF signal pulses between high and low power levels.
- Non-base RF generators switch between predefined power levels or RF frequencies in response to a control signal.
- Techniques are disclosed for determining the predefined power levels and RF frequencies in advance.
Potential applications of this technology:
- Semiconductor manufacturing: The disclosed methods and apparatus can be used in the fabrication of semiconductor devices, where precise control of plasma processing parameters is crucial.
- Thin film deposition: The ability to switch between different power levels and RF frequencies can enhance the deposition process for thin films, allowing for improved film quality and uniformity.
- Surface modification: The multi-frequency plasma processing chamber can be utilized for surface modification of various materials, such as improving adhesion properties or introducing specific functional groups.
Problems solved by this technology:
- Enhanced process control: The ability to switch between different power levels and RF frequencies allows for more precise control over the plasma processing parameters, leading to improved process repeatability and yield.
- Improved uniformity: By proactively switching between power levels or RF frequencies, the patent addresses issues related to non-uniform plasma distribution, resulting in improved substrate uniformity during processing.
Benefits of this technology:
- Increased process flexibility: The ability to switch between different power levels and RF frequencies provides flexibility in tailoring the plasma processing conditions to specific requirements, enabling a wider range of applications.
- Enhanced process efficiency: The disclosed methods and apparatus optimize the use of power and RF frequencies, resulting in improved process efficiency and reduced energy consumption.
- Improved product quality: The precise control over plasma processing parameters leads to improved product quality, with reduced defects and enhanced performance characteristics.
Original Abstract Submitted
methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. the base rf signal pulses between a high power level and a low power level. each of the non-base rf generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base rf signal pulses. alternatively or additionally, each of the non-base rf generators, responsive to a control signal, proactively switches between a first predefined rf frequency and a second predefined rf frequency as the base rf signal pulses. techniques are disclosed for ascertaining in advance of production time the first and second predefined power levels and/or the first and second predefined rf frequencies for the non-base rf signals.