18339349. GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING FETs WITH DIFFERENT CRYSTALLINE ORIENTATION CHANNELS THROUGH A SUBSTRATE (QUALCOMM Incorporated)
GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING FETs WITH DIFFERENT CRYSTALLINE ORIENTATION CHANNELS THROUGH A SUBSTRATE
Organization Name
Inventor(s)
Shreesh Narasimha of Charlotte NC (US)
Peijie Feng of San Diego CA (US)
GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING FETs WITH DIFFERENT CRYSTALLINE ORIENTATION CHANNELS THROUGH A SUBSTRATE
This abstract first appeared for US patent application 18339349 titled 'GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING FETs WITH DIFFERENT CRYSTALLINE ORIENTATION CHANNELS THROUGH A SUBSTRATE
Original Abstract Submitted
A gate-all-around (GAA) field effect transistor (FET) device, and related fabrication methods are disclosed. The GAA FET device includes P-type semiconductor PFET(s) and N-type semiconductor NFET(s) having channels with different crystalline orientation through a substrate. The GAA PFET(s) includes a channel structure of a first type of crystalline orientation (e.g., <110> or <111>) and the GAA NFET(s) include a channel structure of a second type of crystalline orientation (e.g., <100>) different from the first type of crystalline orientation of the GAA PFET(s). The different crystalline orientation channels improve the balance of carrier mobility for both carrier types (i.e., P-type and N-type) of GAA FETs in the GAA FET device. In one aspect, the different crystalline orientation channels are provided through a substrate to increase and/or balance carrier mobility between GAA PFET(s) and NFET(s) to achieve a more balanced drive strength between these types of transistors.
