18339878. ULTRASONIC SENSOR WITH TUNABLE METAL LAYER THICKNESS TO MATCH ULTRASONIC FREQUENCY (QUALCOMM Incorporated)
Contents
ULTRASONIC SENSOR WITH TUNABLE METAL LAYER THICKNESS TO MATCH ULTRASONIC FREQUENCY
Organization Name
Inventor(s)
Chin-Jen Tseng of Fremont CA (US)
Jessica Liu Strohmann of Cupertino CA (US)
Michelle Ma Thin Thin Htay Chan of San Francisco CA (US)
ULTRASONIC SENSOR WITH TUNABLE METAL LAYER THICKNESS TO MATCH ULTRASONIC FREQUENCY
This abstract first appeared for US patent application 18339878 titled 'ULTRASONIC SENSOR WITH TUNABLE METAL LAYER THICKNESS TO MATCH ULTRASONIC FREQUENCY
Original Abstract Submitted
An apparatus includes an ultrasonic sensor stack configured to transmit and receive ultrasonic waves. The ultrasonic sensor stack includes at least a thin film transistor layer, a piezoelectric layer, and a thin electrode layer. The ultrasonic sensor stack further includes a tunable metal layer coupled to the thin electrode layer and an acoustic layer coupled to the tunable metal layer, where the tunable metal layer has a thickness greater than a thickness of the thin electrode layer. The thickness of the tunable metal layer may be configured to match a peak frequency in an ultrasonic frequency range of the ultrasonic waves transmitted by the ultrasonic sensor stack. In some implementations, the tunable metal layer includes a copper layer and the acoustic layer includes polyimide or polyethylene terephthalate.
