Samsung electronics co., ltd. (20240427520). MEMORY CONTROLLER, OPERATION METHOD THEREOF, AND MEMORY SYSTEM

From WikiPatents
Revision as of 14:37, 29 December 2024 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

MEMORY CONTROLLER, OPERATION METHOD THEREOF, AND MEMORY SYSTEM

Organization Name

samsung electronics co., ltd.

Inventor(s)

Soonyoung Kang of Suwon-si (KR)

Dongmin Shin of Suwon-si (KR)

MEMORY CONTROLLER, OPERATION METHOD THEREOF, AND MEMORY SYSTEM

This abstract first appeared for US patent application 20240427520 titled 'MEMORY CONTROLLER, OPERATION METHOD THEREOF, AND MEMORY SYSTEM



Original Abstract Submitted

an example memory system includes a memory device and a memory controller. the memory device is configured to read, from a memory cell array, hard decision data based on a hard read voltage and first soft decision data based on first soft read voltages obtained based on the hard read voltage and a first voltage offset, generate a first compressed sub-segment based on encoding a position of a bit having a first value into a position value for each of first soft decision sub-segments in the first soft decision data, and output first compressed data including first compressed sub-segments. the memory controller is configured to receive the first compressed data, count the number of position values in each of the first compressed sub-segments, and provide, to the memory device based on the counted number, a command to request a change of a voltage offset and a recompression operation.