Samsung electronics co., ltd. (20240427231). OPTICAL PROXIMITY CORRECTION METHOD AND MASK MANUFACTURING METHOD BY USING THE SAME
Contents
OPTICAL PROXIMITY CORRECTION METHOD AND MASK MANUFACTURING METHOD BY USING THE SAME
Organization Name
Inventor(s)
OPTICAL PROXIMITY CORRECTION METHOD AND MASK MANUFACTURING METHOD BY USING THE SAME
This abstract first appeared for US patent application 20240427231 titled 'OPTICAL PROXIMITY CORRECTION METHOD AND MASK MANUFACTURING METHOD BY USING THE SAME
Original Abstract Submitted
the inventive concepts provide an optical proximity correction (opc) method capable of implementing a pattern having a critical pitch by using a single exposure patterning, and a mask manufacturing method including the opc method. the opc method includes receiving a design layout for a target pattern to be formed on a substrate, obtaining an opc pattern by performing a first opc on the design layout, obtaining a simulation contour of the opc pattern, based on the simulation contour of the opc pattern, performing a line-end sharpening (les) opc on line-ends of line patterns extending in a first direction and adjacent to each other in the first direction, cutting a portion of the line-end of the line pattern, and performing a second opc on side lines of another line pattern adjacent to the line-end in a second direction perpendicular to the first direction and extending in the first direction.
