Intel corporation (20240429301). PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY EPITAXIAL LATERAL OVERGROWTH

PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY EPITAXIAL LATERAL OVERGROWTH

Organization Name

intel corporation

Inventor(s)

Rachel A. Steinhardt of Beaverton OR (US)

Dmitri Evgenievich Nikonov of Beaverton OR (US)

Kevin P. O'brien of Portland OR (US)

John J. Plombon of Portland OR (US)

Tristan A. Tronic of Aloha OR (US)

Ian Alexander Young of Olympia WA (US)

Matthew V. Metz of Portland OR (US)

Marko Radosavljevic of Portland OR (US)

Carly Rogan of North Plains OR (US)

Brandon Holybee of Portland OR (US)

Raseong Kim of Portland OR (US)

Punyashloka Debashis of Hillsboro OR (US)

Dominique A. Adams of Portland OR (US)

I-Cheng Tung of Hillsboro OR (US)

Arnab Sen Gupta of Hillsboro OR (US)

Gauri Auluck of Hillsboro OR (US)

Scott B. Clendenning of Portland OR (US)

Pratyush P. Buragohain of Hillsboro OR (US)

PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY EPITAXIAL LATERAL OVERGROWTH

This abstract first appeared for US patent application 20240429301 titled 'PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY EPITAXIAL LATERAL OVERGROWTH

Original Abstract Submitted

a transistor device may be formed with a doped perovskite material as a channel region. the doped perovskite material may be formed via an epitaxial growth process from a seed layer, and the channel regions of the transistor device may be formed from lateral overgrowth from the epitaxial growth process.