Intel corporation (20240429291). INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE SOURCE OR DRAIN CONTACT SELECTIVITY
Contents
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE SOURCE OR DRAIN CONTACT SELECTIVITY
Organization Name
Inventor(s)
Joseph D’silva of Hillsboro OR (US)
Mauro J. Kobrinsky of Portland OR (US)
Shaun Mills of Hillsboro OR (US)
Ehren Mannebach of Tigard OR (US)
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE SOURCE OR DRAIN CONTACT SELECTIVITY
This abstract first appeared for US patent application 20240429291 titled 'INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE SOURCE OR DRAIN CONTACT SELECTIVITY
Original Abstract Submitted
integrated circuit structures having backside source or drain contact selectivity are described. in an example, an integrated circuit structure includes a first epitaxial source or drain structure at an end of a first plurality of horizontally stacked nanowires or fin, with a first conductive source or drain contact vertically beneath and in contact with a bottom of the first epitaxial source or drain structure, and with a first hardmask material beneath and in contact with the first conductive source or drain contact. a second epitaxial source or drain structure is at an end of a second plurality of horizontally stacked nanowires or fin, with a second conductive source or drain contact vertically beneath and in contact with a bottom of the second epitaxial source or drain structure, and a second hardmask material beneath and in contact with the second conductive source or drain contact.
