Intel corporation (20240429238). FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADDITIVE METAL GATES
Contents
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADDITIVE METAL GATES
Organization Name
Inventor(s)
Dan S. Lavric of Beaverton OR (US)
Dax M. Crum of Beaverton OR (US)
Omair Saadat of Beaverton OR (US)
Oleg Golonzka of Beaverton OR (US)
Tahir Ghani of Portland OR (US)
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADDITIVE METAL GATES
This abstract first appeared for US patent application 20240429238 titled 'FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADDITIVE METAL GATES
Original Abstract Submitted
gate-all-around integrated circuit structures having additive metal gates are described. for example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. a first gate stack is over the first vertical arrangement of horizontal nanowires, the first gate stack having a p-type conductive layer with a first portion surrounding the nanowires of the first vertical arrangement of horizontal nanowires and a second portion extending laterally beside and spaced apart from the first portion. a second gate stack is over the second vertical arrangement of horizontal nanowires, the second gate stack having an n-type conductive layer with a first portion surrounding the nanowires of the second vertical arrangement of horizontal nanowires and a second portion adjacent to and in contact with the second portion of the p-type conductive layer.
