Intel corporation (20240429235). COMPLEMENTARY FIELD-EFFECT TRANSISTOR WITH FORKED SEMICONDUCTOR STRUCTURE
Contents
COMPLEMENTARY FIELD-EFFECT TRANSISTOR WITH FORKED SEMICONDUCTOR STRUCTURE
Organization Name
Inventor(s)
Bilal Chehab of Portland OR (US)
Changyok Park of Portland OR (US)
Tuhin Guha Neogi of Sherwood OR (US)
George Joseph Sacks of Ridgefield WA (US)
Christophe Berteau-pavy of Portland OR (US)
COMPLEMENTARY FIELD-EFFECT TRANSISTOR WITH FORKED SEMICONDUCTOR STRUCTURE
This abstract first appeared for US patent application 20240429235 titled 'COMPLEMENTARY FIELD-EFFECT TRANSISTOR WITH FORKED SEMICONDUCTOR STRUCTURE
Original Abstract Submitted
a cfet may include two or more transistors stacked over each other. a transistor may be a fet including a forked semiconductor structure. the source region and drain region of a transistor may have a forked shape including a body and one or more branches protruding from the body. a branch may include a fin, nanoribbon, etc. the channel region may be between a branch of the source region and a branch of the drain region. the body of the source region and the body of the drain region may be on opposite sides of the channel region in two perpendicular directions. the two bodies may be diagonally arranged with respect to the channel region. the body of the source region or drain region may be over a contact that is electrically coupled to a frontside metal layer or a backside metal layer for signal transmission or power delivery.
